Home-grown Semiconductors Ideal for Quantum Computing

Growing electronic components directly onto a semiconductor block avoids messy, noisy oxidation scattering that slows and impedes electronic operation. A UNSW (Australia) study out this month shows that the resulting high-mobility components are ideal candidates for high-frequency, ultra-small electronic devices, quantum dots, and for qubit applications in quantum computing.

Making computers faster requires ever-smaller transistors, with these electronic components now only a handful of nanometres in size. (There are around 12 billion transistors in the postage-stamp sized central chip of modern smartphones.)

However, in even smaller devices, the channel that the electrons flow through has to be very close to the interface between the semiconductor and the metallic gate used to turn the transistor on and off.  Unavoidable surface oxidation and other surface contaminants cause unwanted scattering of electrons flowing through the channel, and also lead to instabilities and noise that are particularly problematic for quantum devices.

In the new work we create transistors in which an ultra-thin metal gate is grown as part of the semiconductor crystal, preventing problems associated with oxidation of the semiconductor surface,” says lead author Yonatan Ashlea Alava.

We have demonstrated that this new design dramatically reduces unwanted effects from surface imperfections, and show that nanoscale quantum point contacts exhibit significantly lower noise than devices fabricated using conventional approaches,” says Yonatan, who is a FLEET PhD student.

This new all single-crystal design will be ideal for making ultra-small electronic devices, quantum dots, and for qubit applications,” comments group leader Prof Alex Hamilton at UNSW.

Collaborating with wafer growers at Cambridge University, the team at UNSW Sydney showed that the problem associated with surface charge can be eliminated by growing an epitaxial aluminium gate before removing the wafer from the growth chamber.

We confirmed the performance improvement via characterisation measurements in the lab at UNSW,” says co-author Dr Daisy Wang.

The high conductivity in ultra-shallow wafers, and the compatibility of the structure with reproducible nano-device fabrication, suggests that MBE-grown aluminium gated wafers are ideal candidates for making ultra-small electronic devices, quantum dots, and for qubit applications.

Source: https://www.fleet.org.au/

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